Experiments
- AG - astrophysics and geophysics
- BK - biophysics and complex systems
- FM - solid state physics and physics of materials
- KT - nuclear physics and particle physics
FM - solid state physics and physics of materials
- FM.ATE - Analytical Transmission Electron Microscopy of Self-organizing Nanocomposites
- FM.DIF - Diffusion in the solid
- FM.ERH - Recovery and Recrystallization of Aluminum
- FM.FMR - Ferromagnetic Resonance
- FM.HEU - High-harmonic Generation with an Ultrashort-Pulse Laser
- FM.LEE - Low-energy Electron Diffraction (LEED)
- FM.MBE - Molecular Beam Epitaxy and Growth Control by Electron Diffraction (RHEED)
- FM.MEC - Mechanical Behavior of Nanostructured Metals
- FM.MKS - Magnetic Coupling in thin films and magneto-optical Kerr effect
- FM.ORG - Organic Electronics: Charge transport in organic semiconductors
- FM.PHA - Phase Transitions of Iron-Carbon-Alloys
- FM.PLD - Pulsed Laser Deposition and Thin Film Characterization by Spectroscopic Ellipsometry
- FM.QHE - Quantum Hall Effect
- FM.SOL - Solar Cell
- FM.TES - Tunnel Effect in Superconductors
- FM.ULP - Spatial and Temporal Distortion of Ultrashort Light Pulses
- KT.MOE - Mössbauer Spectroscopy
- KT.PIR - Elemental analysis by proton induced X-ray emission (PIXE)
- KT.POV - Positron Annihilation: Coincidence Spectroscopy
FM.MBE - Molecular Beam Epitaxy and Growth Control by Electron Diffraction (RHEED)
High purity single crystal semiconductor compounds can be grown by Molecular Beam Epitaxy (MBE) with high control under Ultra High Vacuum (UHV) conditions. In this way complex heterostructures can be deposited with high precision and with atomic sharp interfaces on a heated substrate surface. The growth process critically depends on the substrate temperature as well as on the material fluxes from the sources and on the surface quality. Therefore all the above parameters have to be precisely controlled during epitaxy.
In this Lab a Gallium Nitride (GaN) layer is deposited on a GaN quasi-substrate in a MBE system. The GaN growth is analysed depending on the impinging Ga flux by means of Reflection High Energy Electron Diffraction (RHEED). Under Ga-rich conditions the stable GaN(0001) surface is terminated by a Ga bilayer. Accordingly, the best growth conditions for GaN under Ga-rich supply should maintain the Ga-bilayer at the surface and this will be setup and controlled by RHEED. After the growth of a GaN layer an AlN layer will be deposited on top.